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IXBH6N170 - High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247

IXBH6N170_3747016.PDF Datasheet


 Full text search : High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247


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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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